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 SFH6345
HIGH SPEED 5.3 kV OPTOCOUPLER
FEATURES * Direct Replacement for HCPL4503 * High Speed Optocoupler without Base Connection * GaAlAs Emitter * Integrated Detector with Photodiode and Transistor * High Data Transmission Rate: 1 MBit/s * TTL Compatible * Open Collector Output * CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C: 19% * Good CTR Linearity Relative to Forward Current * Field Effect Stable * Low Coupling Capacitance * Very High Common Mode Transient Immunity dV/dt: 15 kV/ s at VCM=1500 V * Insulation Test Voltage: 5300 VACPK * * DVE VDE 0884 Available with Option 1 * UL Approval, File #E52744 APPLICATIONS * Data Communications * IGBT Drivers * Programmable Controllers DESCRIPTION The SFH6345 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photodetector consisting of a photodiode and a high speed transistor in a DIP-8 plastic package. The device is similar to the 6N135 but has an additional Faraday shield on the detector which enhances the input-output dv/dt immunity. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages.
Package Dimensions in Inches (mm)
4 3 2 1
Pin One I.D.
.268 (6.81) .255 (6.48)
NC 1 Anode 2 Cathode 3
5 6 7 8
.390 (9.91) .379 (9.63)
8 VCC 7 NC 6 Collector 5 Emitter
NC 4
.045 (1.14) .030 (.76) .150 (3.81) .130 (3.30)
.305 typ. (7.75) typ.
.135 (3.43) .115 (2.92) 4 Typ. .022 (.56) .018 (.46) .100 (2.54) Typ. .040 (1.02) .030 (.76 ) 3-9 10 Typ.
.012 (.30) .008 (.20)
Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage............................................................................ 3 V DC Forward Current ................................................................25 mA Surge Forward Current .................................................................1 A tp1 s, 300 pulses/sec. Total Power Dissipation...........................................................45 mW Detector (Si Photodiode + Transistor) Supply Voltage ................................................................ -0.5 to 30 V Output Voltage .............................................................. -0.5 to 25 V Output Current...........................................................................8 mA Total Power Dissipation.........................................................100 mW Package Insulation Isolation Test Voltage between emitter and detector .....................................5300 VACPK (refer to climate DIN 40046, part 2, Nov. 74) Creepage........................................................................ 7 mm min. Clearance ....................................................................... 7 mm min. Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ......................................... 175 Isolation Resistance VIO=500 V, TA=25C, RISOL ............................................... 1012 VIO=500 V, TA=100C, RISOL ............................................. 1011 Storage Temperature Range ...................................... -55 to +150C Ambient Temperature Range...................................... -55 to +100C Junction Temperature .............................................................. 100C Soldering Temperature (t=10 sec. max.)................................. 260C Dip soldering: distance to seating plane 1.5 mm
5-279
Characteristics (TA=0 to 70C, unless otherwise specified,typical values TA=25C)
Description Emitter (IR GaAlAs) Forward Voltage, IF=16 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Photodiode + Transistor) Supply Current, Logic High IF=0, VO (open), VCC=15 V, TA=25C IF=0, VO (open), VCC=15 V Output Current, Output High IF=0, VO (open), VCC=5.5 V, TA=25C IF=0, VO (open), VCC=15 V, TA=25C IF=0, VO (open), VCC=15 V Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance Coupling Transfer Ratio IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C IF=16 mA, VO=0.5 V, VCC=4.5 V Collector Emitter Saturation Voltage IF=16 mA, IO=2.4 mA, VCC=4.5 V, TA=25C Supply Current, Logic Low IF=16 mA, VO open, VCC=15 V CC IC/IF 19 15 0.6 30 -- 0.1 80 0.4 200 V A pF % ICCH A 0.01 1 2 A .003 .01 -- 3 300 0.5 1 50 pF K/W VF IR C0 RthJA 1.6 0.5 75 700 1.9 10 V A pF K/W Symbol Min. Typ. Max. Unit
IOH
CCE RthJA
VOL ICCL
Switching Times (typ.)
Pulse generator ZO=50 tr,tf=5 ns duty cycle 10% t100 s
1 IF 2 VO 5V 1.5 V t tPHL tPLH IF Monitor 3 100 4 7 6 5 CL=15 pF C=100 nF RL VO 8 5V
IF
t
VOL
Description Propagation Delay Time (High-Low) IF=16 mA, VCC=5 V, RL=1.9 k, TA=25C Propagation Delay Time (Low-High) IF=16 mA, VCC=5 V, RL=1.9 k, TA=25C
Symbol tPHL tPLH
Min.
Typ. 0.3 0.3
Max. 0.8 0.8
Unit s s
5-280
SFH6345
Common Mode Transient Immunity
VCM 90% 10% tr VO 5V A: IF=0 mA VO t VFF 4 5 tf B 10% 90% t A IF C=0.1 F 1 2 3 8 7 6 RL VO 5V
0V
VOL
B: IF=16 mA t
Pulse generator VCM
Description Common Mode Transient Immunity (High) IF=0, VCM=1500 VP-P, RL=1.9 k, VCC=5 V, TA=25C Common Mode Transient Immunity (Low) IF=16 mA, VCM=1500 VP-P, RL=1.9 k, VCC=5 V, TA=25C
Symbol | CMH|
Min. 15
Typ. 30
Max.
Unit kV/s
| CML|
15
30
kV/s
5-281
SFH6345


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